2022-09-21 11:04 Status: # Ion implantation Ion source shoots off ions from a source (e.g. phosphorous ions). To get pure stream, put them through a magnetic field then a very narrow slit - undersired ions (heavier or lighter bend differently). Then magnetic lens focuses the beam. Then the beam is accelerated and deflected like in a cathode ray tube to choose a section of the wafer.  ## Benefits - Control dosage (ion current/leave for longer) - Control depth (high E field for accelerating - higher energy) These are independent! ## Drawbacks - Destroys the lattice (needs [subsequent anneal](anneal.md)) - Slow process (not lots of wafers like in [Furnace](Furnace.md) - point by point is slow but powerful) [^1] --- # References [^1]: [vr-4602-wk01-sc06-implantation](../../Spaces/University/ELEC4602%20–%20Microelectronics%20Design%20and%20Technology/Lectures/W1/vr-4602-wk01-sc06-implantation.mp4)