2022-09-25 18:03 Status: # Analogue Tools Important to be disciplined. ## Schematic Entry ### Use a good heirarchy: - functional breakdown - reflected in layout ### Cell schematic: - Use physical components only! e.g. simple amplifier: ![](attachments/Pasted%20image%2020220925180737.png#invert) - Good port names ![](attachments/Pasted%20image%2020220925180808.png#invert) - Don't use global names - include power rails (no connection to supply you didn't know you have) ![](attachments/Pasted%20image%2020220925180848.png#invert) - **NEVER** put voltage sources for testing - have a good symbol for the amplifier. ![](attachments/Pasted%20image%2020220925180959.png#invert) Very important to make sure this is correct! ### Test Bench - Test sources ![](attachments/Pasted%20image%2020220925181130.png#invert) - Current sources - only ever used as input to current mirrors. ![](attachments/Pasted%20image%2020220925181208.png#invert) ## Layout - Cell layout - pcells (premade) - matching (symmetrical gives much better matching performance) - ## Distribution - Power - wide enough for current (e.g. 1mA/$\mu m$) - Clock - arrives at same time at all the gates (equal delay) - interference - References distribution - use shielding ## Pad Ring Coming off the chip - on the perimeter. Where you think about I/O buffering (off chip capacitances are larger, impedances are much lower - beef up signal). [Electrostatic Discharge (ESD) Protection](Electrostatic%20Discharge%20(ESD)%20Protection.md) ## Routing - Wire layer and width - Port placement dictates how you can route to a cell - makes intercell routing easier ex: Ports at the boundary to route on same metal layer. Metal 1 (blue) on left and right, metal 2 (pink) on top and bottom (typical). Also lets you connect ports to itself across the chip - e.g. metal 3 (grey). ![](attachments/Pasted%20image%2020220928090523.png#invert) ## SPICE Simulations ### Functional Simulations Check it is performing the functions it was designed for. - metrics used - verify specs met - Very important to simulate over as many variations as you can think of (large tolerances for manufacturing) - Corner Simulations - PVT - Process variation (fast, slow, up, down) - Power supply voltage - Temperature - References: V, I, f - Monte-Carlo Simulations (matching - add random variations, very efficient to explore large amount of parameters to get statistics). - Simulations on extracted netlist to see parasitic effects. Factors - ![](attachments/Pasted%20image%2020220928093202.png#invert) More parameters - higher dimensional 'rectangle' Higher currents - run faster On an inverter, up is the fast p - down is the fast pull down. ![](attachments/Pasted%20image%2020220928093310.png#invert) Hot temperatures - likely slow transistors - simulate hot temp in the slow corner to get extra slow corner. More components - resistors, caps, inductors - add to sims *or* include in slow corner (large caps) or fast corner (small caps). ## Extraction ![](attachments/Pasted%20image%2020220928093451.png#invert) Verification extraction: ![](attachments/Pasted%20image%2020220928093519.png#invert) - Schematic components (transistors) - Interconnections Can also do parasitic extraction: - capacitances ![](attachments/Pasted%20image%2020220928093625.png#invert) - Resistances: ![](attachments/Pasted%20image%2020220928093640.png#invert) Need to set a threshold or the parasitic netlist becomes too big. Then proceed to postlayout simulation. [^1] --- # References [^1]: [vr-4602-wk02-sc07-analoguetools](../../Spaces/University/ELEC4602%20–%20Microelectronics%20Design%20and%20Technology/Lectures/W2/vr-4602-wk02-sc07-analoguetools.mp4)